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Rubidium-Carbonate-Doped 4,7-Diphenyl-1,10-phenanthroline Electron Transporting Layer for High-Efficiency p-i-n Organic Light Emitting Diodes

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Authors
Leem, Dong-Seok; Kim, Sei-Yong; Kim, Jang-Joo; Chen, Mei-Hsin; Wu, Chih-I
Issue Date
2009-01
Publisher
Electrochemical Society
Citation
Electrochem. Solid-State Lett., 12, J8 (2009)
Keywords
organic light emitting diodesorganic semiconductorsphotoelectron spectrap-i-n diodes
Abstract
We investigated the electrical properties and charge transport mechanisms of a rubidium-carbonate (Rb2CO3)-doped 4,7-diphenyl-1,10-phenanthroline (Bphen) electron transporting layer (ETL). The electron-only devices and photoemission spectroscopy analysis revealed that the formation of doping-induced gap states dominantly contributes to the improvement of carrier transport characteristics of the doped system. High-efficiency green phosphorescent p-doping/intrinsic/n-doping (p-i-n) organic light emitting diodes were demonstrated using the Rb2CO3-doped Bphen ETL and rhenium oxide (ReO3)-doped N,N-diphenyl-N,N-bis(1,1-biphenyl)-4,4-diamine hole transporting layer, exhibiting an external quantum efficiency of 19.2%, power efficiency of 76 lm/W, and low operation voltage of 3.6 V at 1000 cd/m2.
ISSN
1099-0062
Language
English
URI
http://hdl.handle.net/10371/6946
DOI
https://doi.org/10.1149/1.3007239
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Material Science and Engineering (재료공학부) Journal Papers (저널논문_재료공학부)
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