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Air stable C60 based n-type organic field effect transistor using a perfluoropolymer insulator

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Authors
Jang, Junhyuk; Kim, Ji Whan; Park, Nohhwal; Kim, Jang-Joo
Issue Date
2008-02-29
Publisher
Elsevier
Citation
Organic Electronics 9 (481) (2008)
Keywords
Organic field effect transistorn-TypeC60Air stablePerfluorinated polymer gate insulator
Abstract
Air stable n-type organic field effect transistors (OFETs) based on C60 are realized using a perfluoropolymer as the gate dielectric layer. The devices showed the field-effect mobility of 0.049 cm2/V s in ambient air. Replacing the gate dielectric material by SiO2 resulted in no transistor action in ambient air. Perfluorinated gate dielectric layer reduces interface traps significantly for the n-type semiconductor even in air.
ISSN
1566-1199
Language
English
URI
http://hdl.handle.net/10371/7002
DOI
https://doi.org/10.1016/j.orgel.2008.02.011
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Material Science and Engineering (재료공학부) Journal Papers (저널논문_재료공학부)
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