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Transparent, low resistance, and flexible amorphous ZnO-doped In2O3 Anode Grown on a PES Substrate
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Bae, Jung-Hyeok | - |
dc.contributor.author | Moon, Jong-Min | - |
dc.contributor.author | Kang, Jae-Wook | - |
dc.contributor.author | Park, Hyung-Dol | - |
dc.contributor.author | Kim, Jang-Joo | - |
dc.contributor.author | Cho, Woon Jo | - |
dc.contributor.author | Kim, Han-Ki | - |
dc.date.accessioned | 2009-08-12T06:25:15Z | - |
dc.date.available | 2009-08-12T06:25:15Z | - |
dc.date.issued | 2007-01-10 | - |
dc.identifier.citation | J. Electrochem. Soc., 154, J81 (2007) | en |
dc.identifier.issn | 0013-4651 | - |
dc.identifier.uri | https://hdl.handle.net/10371/7023 | - |
dc.description.abstract | Transparent and low resistance amorphous ZnO-doped In2O3 (IZO) anode films were grown by radio-frequency (rf) sputtering on an organic passivated polyethersulfone (PES) substrate for use in flexible organic light-emitting diodes (OLEDs). Under optimized growth conditions, a sheet resistance of 15.2 /, average transmittance above 89% in the green range, and a root mean square roughness of 0.375 nm were obtained, even for the IZO anode film grown in a pure Ar ambient without the addition of oxygen as a reactive gas. All of the IZO anode films had an amorphous structure regardless of the rf power and the working pressure due to the low substrate temperature of 50°C and the structural stability of the amorphous IZO films. In addition, an X-ray photoelectron spectroscopy depth profile obtained for the IZO/PES showed no obvious evidence of interfacial reactions between the IZO anode and the PES substrate, except for some indiffusion of oxygen atoms from the IZO anode. Furthermore, the current-voltage-luminance of the flexible OLEDs fabricated on IZO anode was found to be critically dependent on the sheet resistance of the IZO anode. | en |
dc.description.sponsorship | This work was supported by a Korea Research Foundation grant
funded by the Korean Government (MOEHRD: Basic Research Promotion Fund)(KRF-2006-003-D00243) and the Ministry of Commerce, Industry and Energy. | en |
dc.language.iso | en | - |
dc.publisher | Electrochemical Society | en |
dc.subject | zinc compounds | en |
dc.subject | indium compounds | en |
dc.subject | amorphous semiconductors | en |
dc.subject | organic light emitting diodes | en |
dc.subject | flexible electronics | en |
dc.subject | transparency | en |
dc.subject | surface roughness | en |
dc.subject | anodes | en |
dc.subject | X-ray photoelectron spectra | en |
dc.subject | sputter deposition | en |
dc.subject | semiconductor thin films | en |
dc.title | Transparent, low resistance, and flexible amorphous ZnO-doped In2O3 Anode Grown on a PES Substrate | en |
dc.type | Article | en |
dc.contributor.AlternativeAuthor | 배정혁 | - |
dc.contributor.AlternativeAuthor | 문종민 | - |
dc.contributor.AlternativeAuthor | 강재욱 | - |
dc.contributor.AlternativeAuthor | 박형돌 | - |
dc.contributor.AlternativeAuthor | 김장주 | - |
dc.contributor.AlternativeAuthor | 조운조 | - |
dc.contributor.AlternativeAuthor | 김한기 | - |
dc.identifier.doi | 10.1149/1.2426800 | - |
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