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High-quality thin-film passivation by catalyzer-enhanced chemical vapor deposition for organic light-emitting diodes

Cited 29 time in Web of Science Cited 34 time in Scopus
Authors
Kim, Han-Ki; Kim, Myung Soo; Kang, Jae-Wook; Kim, Jang-Joo; Yi, Min-Su
Issue Date
2007-01-02
Publisher
American Institute of Physics
Citation
Appl. Phys. Lett. 90, 013502 (2007)
Abstract
The thin-film passivation of organic light-emitting diodes (OLEDs) by a SiNx film grown by catalyzer-enhanced chemical vapor deposition was investigated. Using a tungsten catalyzer connected in series, a high-density SiNx passivation layer was deposited on OLEDs and bare polycarbonate (PC) substrates at a substrate temperature of 50 °C. Despite the low substrate temperature, the single SiNx passivation layer, grown on the PC substrate, exhibited a low water vapor transmission rate of (2–6)×10−2 g/m2/day and a high transmittance of 87%. In addition, current-voltage-luminescence results of an OLED passivated with a 150-nm-thick SiNx film compared to nonpassivated sample were identical indicating that the performance of an OLED is not critically affected by radiation from tungsten catalyzer during the SiNx deposition. Moreover, the lifetime to half initial luminance of an OLED passivated with the single 150-nm-thick SiNx layer was 2.5 times longer than that of a nonpassivated sample.
ISSN
0003-6951 (print)
1077-3118 (online)
Language
English
URI
http://hdl.handle.net/10371/7024
DOI
https://doi.org/10.1063/1.2425021
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Material Science and Engineering (재료공학부) Journal Papers (저널논문_재료공학부)
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