IFVD방식의 다중양자우물구조의 서로섞임에서 발생되는 스트레인에 의한 도파로형 광다이오드의 편광의존성

Abstract

Polarization dependency of waveguide photodiode was investigated to see the effect of IFVD on strain of quantum-well. It was expected that during IFVD group V elements interdiffuse dominantly causing tensile strain in the well region and compressive in the barrier. Photocurrent measurement show that absorption edge of TE mode(by heavy hole) moves larger than that of TM mode(by light hole( resulted from tensile strain in well by IFVD. This can be used to make polarization independent photonic integrated circuits.