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The characteristics of Zn-doped InP using spin-on dopant as a diffusion source

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Authors
Yoon, Kyung Hun; Lee, Yong Ho; Yeo, Deok Ho; Kim, Sung June
Issue Date
2002-04
Publisher
Springer Verlag
Citation
0Journal of Electronic Materials, 31, 244(2002)
Keywords
Zn dopingindium phosphide (InP)photoluminescenceactivation energy
Abstract
Zn diffusion into InP was carried out ex-situ using a spin-on dopant as a diffusion
source. The characteristics of Zn-doped InP are analyzed using low-temperature
photoluminescence (PL), differential Hall measurement, and secondary
ion mass spectrometry (SIMS). Dopant activation of Zn is close to 100%
using this method. Band-to-acceptor (B-A) transition peak is dominant in PL,
which is a characteristic usually found in in-situ doping. This evidence along
with an activation energy of 0.5 eV show that the diffusion is substitutional
rather than interstitial.
ISSN
0361-5235 (print)
1543-186X (online)
Language
English
URI
http://hdl.handle.net/10371/7850
DOI
https://doi.org/10.1007/s11664-002-0139-y
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Journal Papers (저널논문_전기·정보공학부)
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