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The characteristics of Zn-doped InP using spin-on dopant as a diffusion source
Cited 1 time in
Web of Science
Cited 2 time in Scopus
- Authors
- Issue Date
- 2002-04
- Publisher
- Springer Verlag
- Citation
- 0Journal of Electronic Materials, 31, 244(2002)
- Keywords
- Zn doping ; indium phosphide (InP) ; photoluminescence ; activation energy
- Abstract
- Zn diffusion into InP was carried out ex-situ using a spin-on dopant as a diffusion
source. The characteristics of Zn-doped InP are analyzed using low-temperature
photoluminescence (PL), differential Hall measurement, and secondary
ion mass spectrometry (SIMS). Dopant activation of Zn is close to 100%
using this method. Band-to-acceptor (B-A) transition peak is dominant in PL,
which is a characteristic usually found in in-situ doping. This evidence along
with an activation energy of 0.5 eV show that the diffusion is substitutional
rather than interstitial.
- ISSN
- 0361-5235 (print)
1543-186X (online)
- Language
- English
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