SHERP

Intermixing Characteristics of Strained InGaAs/InGaAsP Multiple Quantum Well Structure Using Impurity-Free Vacancy Diffusion

Cited 0 time in webofscience Cited 0 time in scopus
Authors
Park, Jung Woo; Kim, Hyun Soo; Kim, Jung Soo; Oh, Dae Kon; Oh, Kwang Ryong; Yeo, Deok Ho; Kim, Sung June
Issue Date
1999-11
Publisher
Japan Society of Applied Physics
Citation
Jpn. J. Appl. Phys. 38 (1999) L1303
Keywords
photonic integrated circuit (PIC)quantum well intermixing (QWI)quantum well disorderingimpurity-free vacancy diffusion (IFVD)InGaAs/InGaAsP quatum well
Abstract
The quantum well intermixing of a strained InGaAs/InGaAsP multiple quantum well using an impurity-free vacancy diffusion technique has been studied. The bandgap wavelength of quantum well was changed by the intermixing from 1.55 µm band to 1.3 µm band with a wavelength shift of 237 nm. The transformation from a multiple quantum well structure to a homogeneous alloy was observed. The strain-enhanced intermixing rate and self-interdiffusion rate were observed.
ISSN
0021-4922 (print)
1347-4065 (online)
Language
English
URI
http://hdl.handle.net/10371/7852
DOI
https://doi.org/10.1143/JJAP.38.L1303
Files in This Item:
There are no files associated with this item.
Appears in Collections:
College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Journal Papers (저널논문_전기·정보공학부)
  • mendeley

Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse