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GaAs MOSFET using MBE-grown Ga2O3 (Gd2O3) as gate oxide

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Authors
Kim, Sung June; Park, J. W.; Hong, M.; Mannaerts, J.
Issue Date
1998-06
Publisher
Institution of Engineering and Technology (IET)
Citation
IEE P.-Circ. Dev. Syst., 1998, 145, (3), pp. 162-164
Abstract
An enhancement mode GaAs metaloxide-
semiconductor field effect transistor
(MOSFET) with Ga203 (Gd203) as gate dielectric
has been successfully fabricated. The low
interface density Ga203 (Gd203) oxide and GaAs
n-channel layer were grown by in situ molecular
beam epitaxy (MBE). The fabricated n-channel
MOSFET with 20 nm-thick oxide and 2 pn-long
gate operated both in enhancement and depletion
modes, with a peak transconductance of 40 mS/
mm in the enhancement mode. While operating
with gate voltages ranging from -1 to 5V, the
device showed a drain current drift of 10.5% for a
duration of 104s, a limited amount of hysteresis
and negligible dispersion of transconductance
from lOHz to 1MHz.
ISSN
1350-2409
Language
English
URI
http://hdl.handle.net/10371/8868
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Journal Papers (저널논문_전기·정보공학부)
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