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GaAs MOSFET using MBE-grown Ga2O3 (Gd2O3) as gate oxide
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Sung June | - |
dc.contributor.author | Park, J. W. | - |
dc.contributor.author | Hong, M. | - |
dc.contributor.author | Mannaerts, J. | - |
dc.date.accessioned | 2009-09-07T23:39:02Z | - |
dc.date.available | 2009-09-07T23:39:02Z | - |
dc.date.issued | 1998-06 | - |
dc.identifier.citation | IEE P.-Circ. Dev. Syst., 1998, 145, (3), pp. 162-164 | en |
dc.identifier.issn | 1350-2409 | - |
dc.identifier.uri | https://hdl.handle.net/10371/8868 | - |
dc.description.abstract | An enhancement mode GaAs metaloxide-
semiconductor field effect transistor (MOSFET) with Ga203 (Gd203) as gate dielectric has been successfully fabricated. The low interface density Ga203 (Gd203) oxide and GaAs n-channel layer were grown by in situ molecular beam epitaxy (MBE). The fabricated n-channel MOSFET with 20 nm-thick oxide and 2 pn-long gate operated both in enhancement and depletion modes, with a peak transconductance of 40 mS/ mm in the enhancement mode. While operating with gate voltages ranging from -1 to 5V, the device showed a drain current drift of 10.5% for a duration of 104s, a limited amount of hysteresis and negligible dispersion of transconductance from lOHz to 1MHz. | en |
dc.description.sponsorship | The authors would like to thank Dr. A.Y. Cho for supporting
this work. s.-J. Kim acknowledges the partial financial support from the Optoelectronics Research Center of KAIST and from the SeoAm Scholarship Foundation in Korea | en |
dc.language.iso | en | - |
dc.publisher | Institution of Engineering and Technology (IET) | en |
dc.title | GaAs MOSFET using MBE-grown Ga2O3 (Gd2O3) as gate oxide | en |
dc.type | Article | en |
dc.contributor.AlternativeAuthor | 김성준 | - |
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