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GaAs MOSFET using MBE-grown Ga2O3 (Gd2O3) as gate oxide

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dc.contributor.authorKim, Sung June-
dc.contributor.authorPark, J. W.-
dc.contributor.authorHong, M.-
dc.contributor.authorMannaerts, J.-
dc.date.accessioned2009-09-07T23:39:02Z-
dc.date.available2009-09-07T23:39:02Z-
dc.date.issued1998-06-
dc.identifier.citationIEE P.-Circ. Dev. Syst., 1998, 145, (3), pp. 162-164en
dc.identifier.issn1350-2409-
dc.identifier.urihttps://hdl.handle.net/10371/8868-
dc.description.abstractAn enhancement mode GaAs metaloxide-
semiconductor field effect transistor
(MOSFET) with Ga203 (Gd203) as gate dielectric
has been successfully fabricated. The low
interface density Ga203 (Gd203) oxide and GaAs
n-channel layer were grown by in situ molecular
beam epitaxy (MBE). The fabricated n-channel
MOSFET with 20 nm-thick oxide and 2 pn-long
gate operated both in enhancement and depletion
modes, with a peak transconductance of 40 mS/
mm in the enhancement mode. While operating
with gate voltages ranging from -1 to 5V, the
device showed a drain current drift of 10.5% for a
duration of 104s, a limited amount of hysteresis
and negligible dispersion of transconductance
from lOHz to 1MHz.
en
dc.description.sponsorshipThe authors would like to thank Dr. A.Y. Cho for supporting
this work. s.-J. Kim acknowledges the partial
financial support from the Optoelectronics Research Center of KAIST and from the SeoAm Scholarship
Foundation in Korea
en
dc.language.isoen-
dc.publisherInstitution of Engineering and Technology (IET)en
dc.titleGaAs MOSFET using MBE-grown Ga2O3 (Gd2O3) as gate oxideen
dc.typeArticleen
dc.contributor.AlternativeAuthor김성준-
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