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Three-stage InP JFET amplifier for receiver optoelectronic integrated circuits
Cited 1 time in
Web of Science
Cited 2 time in Scopus
- Authors
- Issue Date
- 1990-06
- Citation
- IEEE Photon. Technol. Lett., vol. 2, pp. 407-408, June 1990
- Abstract
- Three-stage InP JFET amplifiers have been fabricated on
semi-insulating InP using ion implantation. The amplifiers show dc gain
of 43-65 calculated from amplifier transfer characteristics. From highfrequency
measurements, a 3-dB bandwidth of 400 MHz and a gain of 38
have been measured from the amplifiers.
- ISSN
- 1041-1135
- Language
- English
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