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Three-stage InP JFET amplifier for receiver optoelectronic integrated circuits

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Authors
Jeong, Jichai; Vella-Coleiro, G. P.; Kim, Sung June; Eng, James
Issue Date
1990-06
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
IEEE Photon. Technol. Lett., vol. 2, pp. 407-408, June 1990
Abstract
Three-stage InP JFET amplifiers have been fabricated on
semi-insulating InP using ion implantation. The amplifiers show dc gain
of 43-65 calculated from amplifier transfer characteristics. From highfrequency
measurements, a 3-dB bandwidth of 400 MHz and a gain of 38
have been measured from the amplifiers.
ISSN
1041-1135
Language
English
URI
http://hdl.handle.net/10371/8875
DOI
https://doi.org/10.1109/68.56601
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Journal Papers (저널논문_전기·정보공학부)
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