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Three-stage InP JFET amplifier for receiver optoelectronic integrated circuits
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Jeong, Jichai | - |
| dc.contributor.author | Vella-Coleiro, G. P. | - |
| dc.contributor.author | Kim, Sung June | - |
| dc.contributor.author | Eng, James | - |
| dc.date.accessioned | 2009-09-08 | - |
| dc.date.available | 2009-09-08 | - |
| dc.date.issued | 1990-06 | - |
| dc.identifier.citation | IEEE Photon. Technol. Lett., vol. 2, pp. 407-408, June 1990 | en |
| dc.identifier.issn | 1041-1135 | - |
| dc.identifier.uri | https://hdl.handle.net/10371/8875 | - |
| dc.description.abstract | Three-stage InP JFET amplifiers have been fabricated on
semi-insulating InP using ion implantation. The amplifiers show dc gain of 43-65 calculated from amplifier transfer characteristics. From highfrequency measurements, a 3-dB bandwidth of 400 MHz and a gain of 38 have been measured from the amplifiers. | en |
| dc.description.sponsorship | The authors would like to thank R. A. Resta for dielectric
depositions, D. Ingersoll and D. DeBlis for help in processing, F. Elizabeth and J. Collis for help in layout of test patterns, and B. C. DeLoach for support and encouragement. | en |
| dc.language.iso | en | - |
| dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) | en |
| dc.title | Three-stage InP JFET amplifier for receiver optoelectronic integrated circuits | en |
| dc.type | Article | en |
| dc.contributor.AlternativeAuthor | 정지채 | - |
| dc.contributor.AlternativeAuthor | 김성준 | - |
| dc.identifier.doi | 10.1109/68.56601 | - |
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