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Monolithic integration of InGaAs p-i-n photodetector with full ion-implanted InP JFET amplifier

Cited 34 time in Web of Science Cited 37 time in Scopus
Authors
Kim, Sung June; Guth, G.; Vella-Coleiro, G.; Seabury, C.; Sponsler, W.; Rhoades, B.
Issue Date
1988-09
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
IEEE Electron Device Lett., vol. 9, pp. 447-449, Sept. 1988
Abstract
monolithically integrated p-i-n FET amplifier has been
fabricated using ion-implanted indium phosphide (InP) JFET’s. The
vertically integrated material structure consists of a vapor phase epitaxy
(VPE) grown InCaAs photoabsorption layer and a metal organic
chemical vapor deposition (MOCVD) grown Fe-doped semi-insulating
layer. A Zn diffusion was performed to complete the p-i-n photodiode.
High-performance fully implanted InP JFET’s were used to form the
integrated amplifier with a symmetrical design to remove the dc offset.
With a receiver sensitivity of ~ 36.4 dBm measured at 200-Mbit/s NRZ
for IO RER, it is easily the most sensitive monolithic p-i-n FET preamp
yet reported in this frequency range. The p-i-n amplifier has a dynamic
range of 15 dH.
ISSN
0741-3106
Language
English
URI
http://hdl.handle.net/10371/8878
DOI
https://doi.org/10.1109/55.6941
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Journal Papers (저널논문_전기·정보공학부)
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