Monolithic integration of InGaAs p-i-n photodetector with full ion-implanted InP JFET amplifier

Abstract

monolithically integrated p-i-n FET amplifier has been fabricated using ion-implanted indium phosphide (InP) JFETs. The vertically integrated material structure consists of a vapor phase epitaxy (VPE) grown InCaAs photoabsorption layer and a metal organic chemical vapor deposition (MOCVD) grown Fe-doped semi-insulating layer. A Zn diffusion was performed to complete the p-i-n photodiode. High-performance fully implanted InP JFETs were used to form the integrated amplifier with a symmetrical design to remove the dc offset. With a receiver sensitivity of ~ 36.4 dBm measured at 200-Mbit/s NRZ for IO RER, it is easily the most sensitive monolithic p-i-n FET preamp yet reported in this frequency range. The p-i-n amplifier has a dynamic range of 15 dH.