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Integrated amplifiers using fully ion-implanted InP JFETs with high transconductance

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Authors
Kim, Sung June; Guth, G.; Vella-Coleiro, G.
Issue Date
1988-06
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
IEEE Electron Device Lett., vol. 9, pp. 306-308, June 1988
Abstract
Monolithically integrated amplifiers have been fabricated
on indium phosphide (InP) using fully ion-implanted JFET’s. The FET’s
have a gate length of 1.5 pm and a maximum transconductance of 110
mS/mm, the highest ever reported for ion-implanted InP JFET’s. The
amplifiers utilized both a conventional direct-coupled design as well as a
new symmetrical design. The conventional direct-coupled amplifier shows
a maximum gain of 8 (18 dB) while the symmetrical amplifier design
exhibits the same gain without dc offset regardless of the FET threshold
voltage and the power supply voltage used.
ISSN
0741-3106
Language
English
URI
http://hdl.handle.net/10371/8879
DOI
https://doi.org/10.1109/55.725
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Journal Papers (저널논문_전기·정보공학부)
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