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Noise Characteristic Design of CMOS Source Follower and Voltage Amplifier for the Active Semiconductor Microelectrodes for Neural Signal Recording

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Authors
Kim, Kyung Hwan; Kim, Sung June
Issue Date
2000-07
Publisher
Springer Verlag
Citation
Med Biol Eng Comput 38:469-472
Keywords
Extracellular recordingActive neural probeCMOSSource followerDifferential amplifierSignal-to-device-noise ratio
Abstract
A noise performance design method for the pre-amplifiers of an active
neural probe is given. The on-chip circuitry of the active neural probe consists of
CMOS devices that show high-/ low-frequency noise, so that the device noise can
become dominant. Analysis of the signal-to-device-noise ratio (SDNR) for the CMOS
source follower buffer and two-stage differential voltage amplifier is given. Closedform
expressions for the output noise power are derived and exploited to tailor the
parameters that are controllable during circuit design. The output SDNR is calculated
considering the real extracellular action potentials, the electrode-electrolyte interface
and the noise spectrum of CMOS devices from typical foundries. It is shown that the
output device noise power can be much higher than the output signal power if the
devices at the input stage of the pre-amplifier are made as small as given fabrication
technology permits. Quantitative information of the circuit parameters to achieve an
SDNR higher than 5 for neural spikes with 60p V amplitude are provided for both preamplifier
types.
ISSN
0140-0118 (print)
1741-0444 (online)
Language
English
URI
http://hdl.handle.net/10371/8909
DOI
https://doi.org/10.1007/BF02345018
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Journal Papers (저널논문_전기·정보공학부)
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