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Large area InAlAs/InGaAs metal semiconductor metal photodiode with very low dark current and its frequency response

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Authors
Kim, Jung Bae; Kim, Moon Jung; Kim, Sung June; Hwang, Wen-Yen; Miller, David L.; Das, Mukunda B.; Rios, J. M. M.; Lunardi, L. M.
Issue Date
1997-10
Publisher
Springer Verlag
Citation
Opt. Quantum Electron. 27 (1997) 953
Abstract
An MBE grown InGaAs metal semiconductor metal (MSM) photodiode (PD) with an
InAlAs barrier enhancement layer is reported that has very low dark current and high
speed characteristics. The detector using Cr/Au Schottky metal ®ngers with 4 lm
spacing on a large active area of 300 300 lm2 shows a low dark current of 38 nA at
10 V. This corresponds to a dark current density of 0:42 pA=lm2 and is, to our knowledge,
the best dark current ever obtained from a large area InGaAs MSM PD. The
device also shows a low capacitance of 0:8 pF and a high 3 dB bandwidth of 2:4GHz.
By ®tting the measured frequency response to a model consisting of both RC time and
transit time limited responses, we show that the device has an RC time and a transit
time limited 3 dB bandwidth of 3.0 and 4:9 GHz, respectively.
ISSN
0306-8919 (print)
1572-817X (online)
Language
English
URI
http://hdl.handle.net/10371/8911
DOI
https://doi.org/10.1023/A:1018589903010
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Journal Papers (저널논문_전기·정보공학부)
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