S-Space College of Engineering/Engineering Practice School (공과대학/대학원) Dept. of Electrical and Computer Engineering (전기·정보공학부) Journal Papers (저널논문_전기·정보공학부)
The Role of Complementary Species in P/Be and Ar/Be Co-Implanted InP
- Jeong, Chang Oh; Kim, Sung June; Choe, Byung Doo
- Issue Date
- Springer Verlag
- J. Electron. Mater. 21, 825 (1992)
- InP; co-implantation; chemical effect; stoichiometry; damage effect; Hall measurement; photoluminescence
- Chemical and damage effects are used to explain the influence of complementary species on the activation of co-implanted InP. Recently Raoet al. have shown that the damage is the effective mechanism of enhancing activation efficiency and preventing in-diffusion in the P/Be and Ar/Be co-implanted InP. We have confirmed the results and further examined the role of the complementary species by varying their doses. Activation efficiencies as high as 75% and 69.5% were observed in the P/Be and Ar/Be co-implantation, respectively, which can be compared with 31.7% activation in the Be single implantation. Both activation efficiency and in-diffusion decreased as doses of P and Ar increased, that is, as the amount of damage increased. P/Be had always higher activation efficiency than that of Ar/Be when the doses of co-implants are equal. The ratio of the difference in the two activation efficiencies to that of P/Be was the largest at 1014 cm−2 of co-implant dose. This behavior was attributed to the chemical effect of the co-implanted P. Photoluminescence results near the band edge showed that the intensity of the main peaks of Be single implantation decreased with increasing P and Ar doses.
- 0361-5235 (print)
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