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The Role of Complementary Species in P/Be and Ar/Be Co-Implanted InP

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Authors
Jeong, Chang Oh; Kim, Sung June; Choe, Byung Doo
Issue Date
1992-08
Publisher
Springer Verlag
Citation
J. Electron. Mater. 21, 825 (1992)
Keywords
InPco-implantationchemical effectstoichiometrydamage effectHall measurementphotoluminescence
Abstract
Chemical and damage effects are used to explain the influence of complementary species on the activation of co-implanted InP. Recently Raoet al. have shown that the damage is the effective mechanism of enhancing activation efficiency and preventing in-diffusion in the P/Be and Ar/Be co-implanted InP. We have confirmed the results and further examined the role of the complementary species by varying their doses. Activation efficiencies as high as 75% and 69.5% were observed in the P/Be and Ar/Be co-implantation, respectively, which can be compared with 31.7% activation in the Be single implantation. Both activation efficiency and in-diffusion decreased as doses of P and Ar increased, that is, as the amount of damage increased. P/Be had always higher activation efficiency than that of Ar/Be when the doses of co-implants are equal. The ratio of the difference in the two activation efficiencies to that of P/Be was the largest at 1014 cm−2 of co-implant dose. This behavior was attributed to the chemical effect of the co-implanted P. Photoluminescence results near the band edge showed that the intensity of the main peaks of Be single implantation decreased with increasing P and Ar doses.
ISSN
0361-5235 (print)
1543-186X (online)
Language
English
URI
http://hdl.handle.net/10371/8915
DOI
https://doi.org/10.1007/BF02665522
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Journal Papers (저널논문_전기·정보공학부)
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