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The Role of Complementary Species in P/Be and Ar/Be Co-Implanted InP
Cited 3 time in
Web of Science
Cited 3 time in Scopus
- Authors
- Issue Date
- 1992-08
- Publisher
- Springer Verlag
- Citation
- J. Electron. Mater. 21, 825 (1992)
- Keywords
- InP ; co-implantation ; chemical effect ; stoichiometry ; damage effect ; Hall measurement ; photoluminescence
- Abstract
- Chemical and damage effects are used to explain the influence of complementary species on the activation of co-implanted InP. Recently Raoet al. have shown that the damage is the effective mechanism of enhancing activation efficiency and preventing in-diffusion in the P/Be and Ar/Be co-implanted InP. We have confirmed the results and further examined the role of the complementary species by varying their doses. Activation efficiencies as high as 75% and 69.5% were observed in the P/Be and Ar/Be co-implantation, respectively, which can be compared with 31.7% activation in the Be single implantation. Both activation efficiency and in-diffusion decreased as doses of P and Ar increased, that is, as the amount of damage increased. P/Be had always higher activation efficiency than that of Ar/Be when the doses of co-implants are equal. The ratio of the difference in the two activation efficiencies to that of P/Be was the largest at 1014 cm−2 of co-implant dose. This behavior was attributed to the chemical effect of the co-implanted P. Photoluminescence results near the band edge showed that the intensity of the main peaks of Be single implantation decreased with increasing P and Ar doses.
- ISSN
- 0361-5235 (print)
1543-186X (online)
- Language
- English
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