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Edge Breakdown Suppression of 10 Gbps Avalanche Photodiode

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dc.contributor.authorYoon, Kyung Hun-
dc.contributor.authorShin, Myoung Hoon-
dc.contributor.authorPark, Chan Yong-
dc.contributor.authorYun, Ilgu-
dc.contributor.authorKim, Sung June-
dc.date.accessioned2009-09-08T04:28:37Z-
dc.date.available2009-09-08T04:28:37Z-
dc.date.issued2005-12-
dc.identifier.citationJ. Korean Phys. Soc. 45, S936 (2005)en
dc.identifier.issn0374-4884-
dc.identifier.urihttp://www.kps.or.kr-
dc.identifier.urihttp://hdl.handle.net/10371/8919-
dc.description.abstractWe have demonstrated a high-speed avalanche photodiode (APD) for a 10 Gbps optical communication
system. To achieve a high gain-bandwidth product and reliable operation, the reduction of
the multiplication layer thickness and an optimum design of the internal electric eld distribution
are essential. One- and two-dimensional analysis were done for this purpose. The suppression of
edge breakdown can be achieved by precise control of the thickness of the multiplication layer and
charge densities of the eld control layer. Furthermore we suggest a junction curvature shape having
negative curvature of the equi-potential line at the device edge. This new design successfully
suppressed edge breakdown. The fabricated APD shows high current gain without premature edge
breakdown, and a gain-bandwidth of above 80 GHz has been obtained.
en
dc.language.isoen-
dc.publisher한국물리학회 = The Korean Physical Societyen
dc.subjectAvalanche photodiodeen
dc.subjectOptical communicationen
dc.subjectBreakdownen
dc.titleEdge Breakdown Suppression of 10 Gbps Avalanche Photodiodeen
dc.typeArticleen
dc.contributor.AlternativeAuthor윤경훈-
dc.contributor.AlternativeAuthor신명훈-
dc.contributor.AlternativeAuthor박찬용-
dc.contributor.AlternativeAuthor윤일구-
dc.contributor.AlternativeAuthor김성준-
Appears in Collections:
College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Journal Papers (저널논문_전기·정보공학부)
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