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광소자 제작을 위해 spin-on 방식으로 Zn 도핑된 InP의 광학적 특성 분석

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Authors
윤경훈; 이용호; 여덕호; 이호승; 김성준
Issue Date
2000-05
Citation
제8회 광전자 및 광통신 학술회의, pp. 229-230, 무주리조트, 2000년 5월 16-18일
Abstract
In this study Zn doping was carried out by spin-on method for the fabrication of InP based optical devices. The properties of Zn-doped InP were characterized using low temperature photoluminescence, differential Hall measurement, and secondary ion mass spectrometry. Net hole concentration of 5-8X10(18)cm3 is close to Zn concentration. Band-to-acceptor transition peak is dominant in low temperature photoluminescence.
Language
Korean
URI
http://hdl.handle.net/10371/8920
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Journal Papers (저널논문_전기·정보공학부)
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