Publications
Detailed Information
A Large Bandgap Shift in InGaAs(P)/InP Multi-Quantum Well Structure Obtained by Impurity-Free Vacancy Diffusion Using SiO2 Capping and its Application to Photodetectors
Cited 0 time in
Web of Science
Cited 0 time in Scopus
- Authors
- Issue Date
- 1998-01
- Citation
- Proceedings of SPIE Vol. 3287 (1998)
- Keywords
- InGaAs/InP multi quantum wells (MQW's) ; Optoelectronic devices ; Bandgap tuning ; Impurity - free vacancy diffusion (IFVD) ; Impurity-induced disordering (lID) ; eif-interdiffusion ; Absorption ; Quantum well intermixing ; Photodetectors ; Demultiplexer ; Wavelength-Selective ; Polarization-Selective
- Abstract
- In this paper, we have investigated the bandgap tuning in the InGaAs (P)/ InP multiquantum well (MQW) structure
obtained by impurity-free vacancy diffusion (IFVD) using low temperature photoluminescence (PL). The MQW
intermixing was performed in a rapid thermal annealer (RTA) using the dielectric capping materials, Si02 and SiNX. The
Si02 capping was successfully used with InGaAs cap layer to cause a large bandgap tuning effect in the InGaAs/InP MQW
material. The blue shift of bandgap energy after RTA treatment was as much as 185 and 230 meV at 750 t and 850 t,
respectively, with its value controllable using annealing time and temperature. Samples with Si02-InP or SiN-InGaAs cap
layer combinations, on the other hand, did not show any significant energy shifts. The absorption spectra taken from the
same samples confimed the energy shifts obtained using PL. The process developed can be readily applied to fabrication of
photodetectors that are sensitive to wavelength and/or polarization.
- ISSN
- 0277-786X
- Language
- English
- Files in This Item:
Item View & Download Count
Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.