A Large Bandgap Shift in InGaAs(P)/InP Multi-Quantum Well Structure Obtained by Impurity-Free Vacancy Diffusion Using SiO2 Capping and its Application to Photodetectors

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Si, Sang Kee; Kim, Sung June; Lee, Ju-Han; Yeo, Deok Ho; Yoon, Kyung Hun
Issue Date
International Society for Optical Engineering (SPIE)
Proceedings of SPIE Vol. 3287 (1998)
InGaAs/InP multi quantum wells (MQW's)Optoelectronic devicesBandgap tuningImpurity - free vacancy diffusion (IFVD)Impurity-induced disordering (lID)eif-interdiffusionAbsorptionQuantum well intermixingPhotodetectorsDemultiplexerWavelength-SelectivePolarization-Selective
In this paper, we have investigated the bandgap tuning in the InGaAs (P)/ InP multiquantum well (MQW) structure
obtained by impurity-free vacancy diffusion (IFVD) using low temperature photoluminescence (PL). The MQW
intermixing was performed in a rapid thermal annealer (RTA) using the dielectric capping materials, Si02 and SiNX. The
Si02 capping was successfully used with InGaAs cap layer to cause a large bandgap tuning effect in the InGaAs/InP MQW
material. The blue shift of bandgap energy after RTA treatment was as much as 185 and 230 meV at 750 t and 850 t,
respectively, with its value controllable using annealing time and temperature. Samples with Si02-InP or SiN-InGaAs cap
layer combinations, on the other hand, did not show any significant energy shifts. The absorption spectra taken from the
same samples confimed the energy shifts obtained using PL. The process developed can be readily applied to fabrication of
photodetectors that are sensitive to wavelength and/or polarization.
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Journal Papers (저널논문_전기·정보공학부)
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