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Deep Level in Heavily Zn-doped InP Layers Implanted with Ti and Ti/P

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Authors
Si, Sang Kee; Kim, Sung June; Moon, Young Boo; Yoon, Eui Joon
Issue Date
1998-02
Publisher
American Institute of Physics
Citation
J. Appl. Phys. 83, 2366 (1998)
Abstract
We have investigated deep level peaks observed in the photoluminescence spectrum of heavily
Zn-doped InP layers grown by metalorganic chemical vapor deposition at energies centered at 0.89
and 0.94 eV. These peaks are enhanced when the samples are implanted with Ti. When P is
co-implanted, however, the intensity of these peaks decrease, and at an increased dosage, the peaks
disappear from the spectrum. The peaks are, therefore, dependent on the phosphorus vacancy
produced by the excessive Zn doping or the implant damage. Hall measurement data show that the
Ti/P-implanted p-type InP layer is converted to n type with its sheet resistance decreasing and the
donor activation of Ti increasing for higher P co-implant dose. In addition, the photoluminescence
intensity of the deep level peaks is highly correlated with the sheet resistance.
ISSN
0021-8979
Language
English
URI
http://hdl.handle.net/10371/8970
DOI
https://doi.org/10.1063/1.366981
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Journal Papers (저널논문_전기·정보공학부)
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