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Bandgap tuning of In0.53Ga0.47As/InP multiquantum well structure by impurity free vacancy diffusion using In0.53Ga0.47As cap layer and SiO2 dielectric capping

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Authors
Lee, Ju Han; Si, Sang Kee; Moon, Young Boo; Yoon, Eui Joon; Kim, Sung June
Issue Date
1997-06
Publisher
Institution of Engineering and Technology (IET)
Citation
Electronics Letters, 1997, 33, (13), pp.1179-1181
Abstract
SiO, has been successfully used as the dielectric capping material
for bandgap tuning in TnGaAshP MQW for the first time where
the InGaAs cap layer is used simultaneously. The samples showed
large blue shifts of bandgap energy after RTA treatment (185 and
230meV at 750 and 850”C, respectively). Samples with SO,-InP
or SiN,v-InGaAs cap layer combinations did not show significant
energy shifts.
ISSN
0013-5194
Language
English
URI
http://hdl.handle.net/10371/8978
DOI
https://doi.org/10.1049/el:19970761
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Journal Papers (저널논문_전기·정보공학부)
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