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Issue Date	Title / Author(s) / Citation	File
2009-08	Comparative Study of the Low-Frequency-Noise Behaviors in a-IGZO Thin-Film Transistors With Al2O3 and Al2O3/SiNx Gate Dielectrics Cho, In-Tak; Cheong, Woo-Seok; Hwang, Chi-Sun; Lee, Jeong-Min; Kwon, Hyuck-In; Lee, Jong-Ho IEEE Electron Device Letters, vol. 30, no. 8, pp. 828~830	DOI
2015-01	Low frequency noise characteristics in multilayer WSe2 field effect transistor Cho, In-Tak; Kim, Jong In; Hong, Yoonki; Roh, Jeongkyun; Shin, Hyeonwoo; Baek, Geun Woo; Lee, Changhee; Hong, Byung Hee; Jin, Sung Hun; Lee, Jong-Ho Applied Physics Letters, Vol.106 No.2, p. 023504	DOI
2015-11	Fluorinated CYTOP passivation effects on the electrical reliability of multilayer MoS2 field-effect transistors Roh, Jeongkyun; Cho, In-Tak; Shin, Hyeonwoo; Baek, Geun Woo; Hong, Byung Hee; Lee, Jong-Ho; Jin, Sung Hun; Lee, Changhee Nanotechnology, Vol.26 No.45, p. 455201	DOI
2016-08	Elimination of the gate and drain bias stresses in I-V characteristics of WSe2 FETs by using dual channel pulse measurement Park, Jun-Mo; Cho, In-Tak; Kang, Won-Mook; Park, Byung-Gook; Lee, Jong-Ho Applied Physics Letters, Vol.109 No.5, p. 053503	DOI