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Showing results 1 to 6 of 6

Issue Date	Title / Author(s) / Citation	File	Altmetrics
2019-06	Origin of Ferroelectric Phase in Undoped HfO2 Films Deposited by Sputtering Mittmann, Terence; Materano, Monica; Lomenzo, Patrick D.; Park, Min Hyuk; Stolichnov, Igor; Cavalieri, Matteo; Zhou, Chuanzhen; Chung, Ching-Chang; Jones, Jacob L.; Szyjka, Thomas; Mueller, Martina; Kersch, Alfred; Mikolajick, Thomas; Schroeder, Uwe Advanced Materials Interfaces, Vol.6 No.11, p. 1900042	DOI
2019-12	On the Origin of the Large Remanent Polarization in La:HfO2 Schenk, Tony; Fancher, Chris M.; Park, Min Hyuk; Richter, Claudia; Kuenneth, Christopher; Kersch, Alfred; Jones, Jacob L.; Mikolajick, Thomas; Schroeder, Uwe Advanced Electronic Materials, Vol.5 No.12, p. 1900303	DOI
2020-12	A perspective on semiconductor devices based on fluorite-structured ferroelectrics from the materials-device integration perspective Park, Ju Yong; Yang, Kun; Lee, Dong Hyun; Kim, Se Hyun; Lee, Younghwan; Reddy, P. R. Sekhar; Jones, Jacob L.; Park, Min Hyuk Journal of Applied Physics, Vol.128 No.24	DOI
2021-01	Ultra-flexible and rollable 2D-MoS2/Si heterojunction-based near-infrared photodetector: Via direct synthesis Choi, Jung-Min; Jang, Hye Yeon; Kim, Ah Ra; Kwon, Jung-Dae; Cho, Byungjin; Park, Min Hyuk; Kim, Yonghun Nanoscale, Vol.13 No.2, pp.672-680	DOI
2021-02	Suppressed Stochastic Switching Behavior and Improved Synaptic Functions in an Atomic Switch Embedded with a 2D NbSe2Material Jeon, Yu-Rim; Choi, Jungmin; Kwon, Jung-Dae; Park, Min Hyuk; Kim, Yonghun; Choi, Changhwan ACS Applied Materials and Interfaces, Vol.13 No.8, pp.10161-10170	DOI
2023-12	Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide Lee, Jaewook; Yang, Kun; Kwon, Ju Young; Kim, Ji Eun; Han, Dong In; Lee, Dong Hyun; Yoon, Jung Ho; Park, Min Hyuk Nano Convergence, Vol.10(1):55	view file DOI

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