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Showing results 1 to 7 of 7
Issue Date
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2004
Epitaxial growth of thin GaNAs and InGaNAs layers by metalorganic chemical vapor deposition
나현석
link
2006
Growth of crack-free AlGaN epitaxial layers and In-rich InGaNAlGaN quantum dots by MOCVD
송동우
link
2007
Mg-acceptor activation mechanism of the as-grown p-type GaN using dimethylhydrazine(DMHY) grown by MOCVD
이고은
link
2007
Growth of In-rich InGaN nanostructures and investigation of their structural, optical, and device properties
김희진
link
2009
Growth of GaN using Alternative Materials :
김동혁
link
2010
Growth of GaN epi-layer using AIN and GaN buffer layer on patterned sapphire substrate by metalorganic chemical vapor deposition (MOCVD)
김남혁
link
2021-02
Study on heteroepitaxial growth of GaN using sapphire nano-membrane for micro-light-emitting diodes
이승민
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