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Showing results 1 to 26 of 26

Issue Date	Title / Author(s) / Citation	File
1997	유기금속 화학증착법에 의한 고유전율(Ba,Sr) TiO₃ 박막의 증착 및 유전 특성 연구 조호진	link
1997	MOCVD growth of C-doped GaAsAlGaAs and quantum wire on nonplanar substrates 이정석	link
1998	In(Ga)AsInP 양자우물 구조의 성장과 계면구조 분석 문영부	link
1999-02	Low Temperature Chemical Vapor Deposition of (Ba, Sr)TiO3 Thin Films for High Density Dynamic Random Access Memory Capacitors Joo, Jae-Hyun; Park, Jong-Bum; Kim, Younsoo; Lee, Kong-Soo; Lee, Jun-Sik; Roh, Jae-Sung; Kim, Jae Jeong Japanese Journal of Applied Physics 38 (1999) L195-L198	DOI
2002	Growth and characterization of inGaN quantum well structures for light emitting diode and laser diode applications 여환국	link
2003	In[0.53]Ga[0.47] AsInP의 양자 우물 구조를 응용한 적외선 수광 소자 제작 강종훈	link
2003	MOCVD법을 이용한 회전 멀티 웨이퍼의 균일도 최적화 조건에 대한 수치해석 임홍택	link
2004	Epitaxial growth of thin GaNAs and InGaNAs layers by metalorganic chemical vapor deposition 나현석	link
2004	(The)Epitaxial growth and characterizations of In-rich InGaN by metalorganic chemical vapor deposition 신유리	link
2004	Deposition behaviors of Ru thin films prepared by chemical vapor deposition and their application to the electrodes of the DRAM devices 강상열	link
2004-05	Pretreatment technique for surface improvement of Ru films in Ru-metalorganic chemical vapor deposition Han, Hee; Kim, Jae Jeong; Yoon, Do Young Journal of Vacuum Science and Technology a Vacuum Surfaces and Films 22(4), 1120-1123	DOI
2004-11	Superconformal Cu Electrodeposition on Various Substrates Kim, Soo-Kil; Cho, Sung Ki; Kim, Jae Jeong; Lee, Young-Soo Electrochemical and Solid-State Letters, 8(1), C19-C21	view file DOI
2005	Epitaxial growth of InN on GaN by MOCVD and analysis of structural and optical properties 김봉구	link
2006	(The)Growth characteristics of (Ba,Sr)Tio3 thin films grown near 460℃ using a dome-type MOCVD reactor 전충배	link
2006	Metal organic chemical vapor deposition of Pb(Zr,Ti)O3 on ir bottom electrode and effects of electrodes on electrical properties 조금석	link
2006	Deposition behavior and dielectric properties of high dielectric constant oxide thin films 노상용	link
2007	Growth of high quality InAs quantum dots with periodic AsH₃ interruption (PAI) 이영수	link
2007	Ir 기판 표면 처리에 따른 MOCVD Pb(Zr,Ti)O₃박막의 증착 및 특성에 관한 연구 이근	link
2007	유기 금속 화학 증창법을 이용한 Hf 기반 게이트 금속전극용 박막의 성장 및 특성향상에 관한 연구 장재혁	link
2008	Property improvement of the Ruthenium thin films deposited by metal-organic chemical vapor deposition for the electrodes of the DRAM devices 김범석	link
2009	Growth of GaN using Alternative Materials : 김동혁	link
2011-02	유기금속화학 기상증착법을 이용한 고품질 산화아연 박막의 성장과 특성 평가 허재혁	link
2011-08	개조된 MOCVD법에 의한 Bi₂Te₃ 박막의 성장 및 열전 특성 유현우	link
2014-02	The growth of InSb epitaxial layers by LPMOCVD and crystal quality analysis by photoluminescence 정진욱	view file
2018-02	InGaZnO based charge trap device for NAND flash memory application 황은석	view file
2019-08	Fabricataion of Flexible UV Photodetector Array Using ZnO Nanotubes Grown on Graphene Films 김희훈	view file link

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