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Electrokinetics of all-around-gated ambipolar ionic field effect trnasistor
All around gate를 이용한 전기장 구동 양극성 이온 트랜지스터의 electrokinetic 현상

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Authors
이승현
Advisor
김기범
Major
공과대학 재료공학부
Issue Date
2016-02
Publisher
서울대학교 대학원
Keywords
ionic field effect trnasistornanochannel
Description
학위논문 (박사)-- 서울대학교 대학원 : 재료공학부, 2016. 2. 김기범.
Abstract
In this dissertation, the advanced device was developed for overcoming the limitation of IFET which can be manipulate charged species pass through nanochannel. And the slow response time of nanofuidic device was studied for improving the device.
we developed a versatile ionic field effect transistor (IFET) which has an ambipolar function for manipulating molecules regardless of their polarity and can be operated at wide range of electrolytic concentrations (10-5M~1M). The IFET has circular nanochannels completely covered by gate electrodes, called “all-around-gate”, with a aluminum oxide (Al2O3) of a near-zero surface charged oxide layer. Experimental and numerical validations were conducted for characterizing the IFET. We found that the versatility is originated from the zero-charge density of oxide layer and all-around-gate structure which increase the efficiency of gate effect 5 times higher than a previously developed planar-gate by capacitance calculations. Our numerical model adapts Poisson-Nernst-Plank-Stokes (PNPS) formulations with additional nonlinear constraints of fringing field effect and counter-ion condensation and the experiment and numerical results are well matched. The device can control the transportation of ions at severe concentration up to 1M electrolyte which resembles a backflow of a shale gas extraction process. Furthermore, while traditional IFETs can manipulate either positively or negatively charged species depending on the inherently large surface charge of oxide layer, the presenting device and mechanism provide effective means to control the motion of both negatively and positively charged molecules which is important in DNA sequencing through nanopore, medical diagnosis system and point-of-care system, etc.
However the ambipolar IFET showed slow response time during ionic current measurement. Smeets analyzed the slow response time using a simple RC electric circuit, but it does not fit well to experiment data below t = 50 us. We hypothesized that the long response time comes from the electric double layer capacitor. Thus we developed a new model and equation that includes “EDL capacitor”. Silicon nitride nanopore device was made by traditional fabrication method. The device measurement was done by patch clamp. By matching the new model to experimental data, we showed the possibility of a better theory than Smeets’equation.
Language
English
URI
http://hdl.handle.net/10371/118063
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Material Science and Engineering (재료공학부) Theses (Ph.D. / Sc.D._재료공학부)
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