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(A) study on multiband reconfigurable linear cmos power amplifier for mobile applications : 이동통신 기기에 적합한 재구성이 가능한 다중대역 선형 CMOS 전력증폭기에 관한 연구

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dc.contributor.advisor권영우-
dc.contributor.author김운하-
dc.date.accessioned2017-07-13T07:07:39Z-
dc.date.available2017-07-13T07:07:39Z-
dc.date.issued2015-02-
dc.identifier.other000000025223-
dc.identifier.urihttps://hdl.handle.net/10371/119061-
dc.description학위논문 (박사)-- 서울대학교 대학원 : 전기·컴퓨터공학부, 2015. 2. 권영우.-
dc.description.abstractIn this Dissertation, a study on multiband reconfigurable linear CMOS power amplifier (PA) is performed. Since a larger number of frequency bands is allocated for 3G/4G mobile communication standards nowadays, handset PAs are required to support the ever-increasing number of frequency bands. With the advent of high-speed wireless data transmission, handset PAs are also demanded to perform linear power amplification under the wide-band signal condition. Even though the CMOS technology has cost and size benefits, however, designing a watt-level linear CMOS PA is a challenging issue due to low breakdown voltage and nonlinear nature of the CMOS device.
To resolve the issues above, this study presents two methods suitable for multiband (MB) linear CMOS PA: a reconfigurable MB matching structure and a linearization technique. The proposed MB structure shares a PA core to reduce the cost and size, and contains the power- and frequency-reconfigurable matching networks as well as the output path-selection function. Thus, it can perform the MB operation requiring multiple frequency bands and target output powers. The reconfiguration mechanism is quantitatively analyzed and experimentally demonstrated. The fabricated tri-band reconfigurable 3G UMTS PA using an InGaP/GaAs heterojunction bipolar transistor (HBT) process for practical handset application showed minimal efficiency degradation of less than 2% by multi-banding, compared with a single-band reference PA.
For linearization of a CMOS PA, a phase-based linearization technique is presented. Since the PA nonlinearity is determined by the dynamic AM-AM and AM-PM, the two distortions should simultaneously be considered in linearization. Contrary to the previous works which have focused on the correction of AM-AM distortion by providing an envelope-dependent gate-bias, this work proposes an AM-PM linearizer using a varactor and an envelope-reshaping circuit. This linearizer helps the PA recover AM-AM distortion as well. To validate the usefulness of the proposed linearizer, 1.88 GHz and 0.9 GHz stacked-FET PAs using a 0.32-μm silicon-on-insulator (SOI) CMOS process were designed and fabricated. Measurement results showed that the fabricated 1.88 / 0.9 GHz linear CMOS PAs achieved linear efficiencies (meeting –39 dBc W-CDMA ACLR) of higher than 44 / 49%. Furthermore, a single-chain MB linear CMOS PA was implemented based on the proposed MB reconfiguration and linearization techniques. The fabricated MB PA, which has two outputs and covers five popular uplink UMTS/LTE bands (Band 1/2/4/5/8: 824 ~ 1980 MHz), showed minimal efficiency degradation (< 3.3%) compared to the single-band dedicated CMOS PA with W-CDMA efficiencies in excess of 40.7%.
Finally, the signal-bandwidth limiting effect of the envelope-based linear CMOS PA is discussed and a solution is proposed. Due to the time delay during envelope-detection and shaping, a timing mismatch between the incoming RF signal and envelope-reshaped signal occurs, thus resulting in no linearization effect under wide-band signal (LTE 20 MHz or more) conditions. To resolve the problem, a group delay circuit with a compact size is employed and thus the linearization effect of the proposed phase-based linearizer is maintained up to 40 MHz LTE bandwidth.
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dc.description.tableofcontentsAbstract i
Contents iii
List of Tables vi
List of Figures vii
1. Introduction 1
1.1 Motivation 1
1.2 Multiband PA Structure 4
1.3 Linearization of CMOS PA 6
1.4 Dissertation Organization 7
1.5 References 9
2. A Multiband Reconfigurable Power Amplifier for 3G UMTS Handset Applications 10
2.1 Introduction 10
2.2 Operation Principle of the Reconfigurable Output Matching Network 12
2.2.1 Power Reconfigurable Network (PRN) 14
2.2.2 Frequency Reconfigurable Network (FRN) 17
2.2.3 Path Selection Network (PSN) 20
2.2.4 Experimental Validation of the PRN and FRN 24
2.3 Fabrication and Measurement of a MB UMTS Reconfigurable PA 26
2.3.1 Design 26
2.3.2 Measurement 31
2.4 Summary 37
2.5 References 38
3. Linearization of CMOS Power Amplifier and Its Multiband Application 41
3.1 Introduction 41
3.2 Linearization of CMOS PAs: Prior Arts 43
3.3 Harmonic Termination 46
3.3.1 Operation Analysis 47
3.3.2 Experimental Validation 52
3.4 Control of Gate Bias Modulation Effect 54
3.4.1 Analysis 54
3.4.2 Experimental Validation 60
3.5 Proposed Linearization #1: Hybrid Bias 67
3.6 Proposed Linearization #2: Phase Injection 71
3.6.1 Motivation 71
3.6.2 Phase (Capacitance) Injection 72
3.7 Linear CMOS PA Design 75
3.7.1 Baseline PA Design 76
3.7.2 Linearizer Design 78
3.7.3 Fabrication 82
3.8 Measurement Results 83
3.8.1 CW Measurement 83
3.8.2 W-CDMA Measurement 84
3.8.3 LTE Measurement 87
3.9 A Single-Chain MB Reconfigurable Linear PA in SOI CMOS 90
3.9.1 MB Linear CMOS PA: Design 90
3.9.2 MB Linear CMOS PA: Measurement 94
3.10 Summary 99
3.11 References 100
4. Linearization of CMOS Power Amplifier Convering Wideband Signal 105
4.1 Introduction 105
4.2 Bandwidth Limitation of Envelope-Based Linearizers 106
4.2.1 Analysis 106
4.2.2 Delay Correction 110
4.2.3 Feedforward Envelope-Detection Structure with a Delay T/L 114
4.3 Group Delay Circuit 117
4.3.1 Positive GDC versus Negative GDC 117
4.3.2 Left-Handed T/L-Based GDC 119
4.4 Fabrication and Measurement 122
4.4.1 GDC Measurement 123
4.4.2 LTE Measurement 124
4.5 Summary 127
4.6 References 128
5. Conclusions 130
5.1 Research Summary 130
5.2 Future Works 132
Abstract in Korean 133
Publications 135
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dc.formatapplication/pdf-
dc.format.extent13061151 bytes-
dc.format.mediumapplication/pdf-
dc.language.isoen-
dc.publisher서울대학교 대학원-
dc.subjectCMOS-
dc.subjectlinearization-
dc.subjectLTE-
dc.subjectmultiband-
dc.subjectpower amplifier-
dc.subjectreconfigurable-
dc.subjectW-CDMA-
dc.subject.ddc621-
dc.title(A) study on multiband reconfigurable linear cmos power amplifier for mobile applications-
dc.title.alternative이동통신 기기에 적합한 재구성이 가능한 다중대역 선형 CMOS 전력증폭기에 관한 연구-
dc.typeThesis-
dc.contributor.AlternativeAuthorUnha Kim-
dc.description.degreeDoctor-
dc.citation.pagesxiv, 136-
dc.contributor.affiliation공과대학 전기·컴퓨터공학부-
dc.date.awarded2015-02-
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