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Nano-structured RRAM for Ultra High Density and Low Power RRAM
초고집적 및 저전력 동작을 위한 나노 구조의 저항변화 메모리

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dc.contributor.advisor박병국-
dc.contributor.author정성헌-
dc.date.accessioned2017-07-13T07:23:03Z-
dc.date.available2017-07-13T07:23:03Z-
dc.date.issued2016-02-
dc.identifier.other000000133373-
dc.identifier.urihttps://hdl.handle.net/10371/119314-
dc.description학위논문 (박사)-- 서울대학교 대학원 : 전기·정보공학부, 2016. 2. 박병국.-
dc.description.abstractThe IT industry has grown explosively since the emergence of a variety of mobile devices that make us handle information anytime and anywhere. The demand of large-capacity information storage device has increased with this trend. Currently, the development of the three-dimensional stacked NAND flash memory is nestled into the mainstream of a large-capacity memory. On the other hand, in order to achieve excellent memory performance of much faster, less power consumption, and higher density, the research of new memories are being actively conducted as a alternative to the NAND flash memory. Among these memories, RRAM has attracted much attention as one of the most promising candidates that may replace the conventional memory due to its simple structure, good scalability, high-speed operation, and low energy consumption. In spite of the above-mentioned advantages, RRAM suffers from high reset current, poor reliability such as large variation in set/reset voltages and LRS/HRS resistances. It is struggling to commercialize. In this thesis, a study was carried out to solve the problems through a structural change of RRAM.
In the introduction, the basic structure and operation principle of RRAM is described. Especially, advantage of nitride-based RRAM with Si bottom electrode is also described. And, the methods to solve the issues of RRAM is introduced. Searching for the optimal combination of material and Applying additional treatment to the device can improve the memory characteristics. Structural approach to improve performance can be a method for fundamentally solving the problem.
First, the basic bipolar resistive switching characterstics and the conduction mechanism are analyzed in large size cell of silicon nitride-based RRAM with Si bottom electrode.
Then, the cross-point array of the RRAM that is based on these materials is demostrated for the first time. In the fabricated cross-point RRAM cell, analysis of active area scaling effect is performed. It is found that the switching voltage increases with the scaling down of the active area.
In order to reduce the switching voltage and improve the memory performance, a new device structure having a nano-cone shaped silicon is proposed and is applied to the cross-point array of RRAM for the first time. By using simulation tool, it is verified that the electric field concentration effect occurs at the sharp point of nano-cone and the electric field is concentrated locally. These results imply that the position occuring resistive switching phenomenon is confined at the end of nano-cone and the posibility of the reduced switching voltage and uniform switching behavior can be achieved.
Finally, the feasibility of low power operation in the proposed device is successfully verified by the fabrication and the measurement.
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dc.description.tableofcontentsChapter 1 Introduction 1
1.1 IT and Memory Industry 1
1.2 RRAM Technology 5
1.2.1 Evolution of RRAM Technology 5
1.2.2 Basic Operation of RRAM 7
1.2.3 Challenges and Opportunities of RRAM 10
1.3 Nitride based RRAM with Si Bottom Electrode 13
1.4 Motivation and Thesis Organization 15

Chapter 2 Basic Characteristics of Nitride-based RRAM with Si Bottom Electrode 17
2.1 Fabrication Results 17
2.2 Measurement Results 19
2.2.1 Resistive Switching Characteristics 19
2.2.2 Conduction Mechanism 21

Chapter 3 Area Scaling Characteristics of Cross-point RRAM 33
3.1 Fabrication Results 33
3.1.1 Process Flow 33
3.1.2 Key Process Steps 36
3.2 Measurement Results 43

Chapter 4 Nanostructured RRAM 55
4.1 Nano-cone RRAM 55
4.2 Simulation Results 57
4.3 Fabrication Results 63
4.3.1 Process Flow 63
4.3.2 Anisotropic Wet Etch 67
4.4 Measurement Results 76

Chapter 5 Conclusions 80

Bibliography 82

Abstract in Korean 92
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dc.formatapplication/pdf-
dc.format.extent2546895 bytes-
dc.format.mediumapplication/pdf-
dc.language.isoen-
dc.publisher서울대학교 대학원-
dc.subjectRRAM-
dc.subjectSi3N4-
dc.subjectSi-
dc.subjectcross-point RRAM-
dc.subjectnano-cone-
dc.subjectelectric field concentration effect-
dc.subject.ddc621-
dc.titleNano-structured RRAM for Ultra High Density and Low Power RRAM-
dc.title.alternative초고집적 및 저전력 동작을 위한 나노 구조의 저항변화 메모리-
dc.typeThesis-
dc.contributor.AlternativeAuthorSunghun Jung-
dc.description.degreeDoctor-
dc.citation.pages94-
dc.contributor.affiliation공과대학 전기·정보공학부-
dc.date.awarded2016-02-
Appears in Collections:
College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Theses (Ph.D. / Sc.D._전기·정보공학부)
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