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Material Engineering of Zinc Oxide Semiconductor for Solution-processed Thin Film Transistors : 용액형 박막 트랜지스터를 위한 산화 아연 반도체의 소재 공정

DC Field Value Language
dc.contributor.advisor김연상-
dc.contributor.authorSi Yun Park-
dc.date.accessioned2017-07-14T01:49:33Z-
dc.date.available2017-07-14T01:49:33Z-
dc.date.issued2015-08-
dc.identifier.other000000066923-
dc.identifier.urihttps://hdl.handle.net/10371/122379-
dc.description학위논문 (박사)-- 서울대학교 융합과학기술대학원 : 융합과학부 나노융합전공, 2015. 8. 김연상.-
dc.description.tableofcontentsContents

Abstract ................................................................................... I
Contents ................................................................................ IV
List of tables and figures ....................................................... V
Abbreviations .................................................................... XIII

Chapter 1. Introduction ......................................................... 1
1.1 Reference ................................................................................................ 4

Chapter 2. Literature review ................................................. 5
2.1 Introduction of thin film transistor .......................................................... 5
2.1.1 TFT… .............................................................................................. 6
2.1.2 Operation of TFT ............................................................................. 8
2.1.3 Parameters of TFT ............................................................................ 9
2.1.4 Active matrix display ......................................................................13
2.1.5 Alternatives to silicon ......................................................................14
2.2 Metal oxide semiconductor ....................................................................15
2.2.1 ZnO semiconductor .........................................................................15
2.2.2 Structure and electrical properties of ZnO .......................................16
2.2.3 Doping mechanism of ZnO .............................................................22
2.2.4 Interface trap of ZnO/dielectric layer ..............................................26
2.3 References ..............................................................................................29

Chapter 3. Experiments ....................................................... 33
3.1 Materials ................................................................................................33
3.2 Fabrication of TFTs ................................................................................36
3.3 Characterizations of TFTs ......................................................................36
3.4 Analysis tools .........................................................................................37
3.4.1 AFM, HR-TEM and FFT-SAED pattern .........................................38
3.4.2 X-ray photoelectron spectroscopy ...................................................39
3.4.3 UV-vis absorption spectroscopy ......................................................39
3.5 References ..............................................................................................41

Chapter 4. Optimization of zinc ammine complex precursors
for ZnO TFTs ........................................................................ 42
4.1 Introduction ............................................................................................42
4.2 Results and discussion............................................................................45
4.2.1 Zinc ammine complex precusors .....................................................45
4.2.2 TFT performances with different ZnO sources ................................49
4.2.3 Structural, morphological, and chemical analysis of ZnO films ......54
4.3 Reference ...............................................................................................61
Chapter 5. Alkali metal dopants for high-performance and
low-temperature ZnO TFTs ................................................. 63
5.1 Introduction ............................................................................................63
5.2 Results and discussion............................................................................65
5.2.1 Alkali metal doped ZnO TFTs .........................................................65
5.2.2 Role of alkali metal dopants in ZnO semiconductor ........................74
5.2.3 Ion gel dielectric layer for low operation voltage ............................78
5.3 Reference ...............................................................................................82

Chapter 6. Characterization of alkali metal doped ZnO TFTs
with various analytic tools ................................................. 85
6.1 Introduction ............................................................................................85
6.2 Results and discussion............................................................................88
6.2.1 Structure and morphology of alkali metal doped ZnO films............88
6.2.2 Interface trap of alkali metal doped ZnO films ................................94
6.2.3 Relation between doping concentration and mobility ......................98
6.2.4 Optical analysis of alkali metal doped ZnO films ............................99
6.2.1 Investigation of residual doping effect ..........................................107
6.3 Reference ............................................................................................. 115

Chapter 7. Enhancement of Electrical Properties for ZnO
Thin Film Transistors by Alkali Earth Metal Doping .......119
7.1 Introduction .......................................................................................... 119
7.2 Results and discussion..........................................................................120
7.2.1 Electrical properties of alkali earth metal doped ZnO TFTs ..........120
7.2.2 Carrier concentration of alkali earth metal doped ZnO films ........124
7.2.3 Analysis of alkali earth metal doped ZnO films ............................127
7.2.4 Positive bias test of alkali earth metal doped ZnO TFTs ...............132
7.3 Reference .............................................................................................136

Chapter 8. Conclusion ........................................................ 138

초록(국문) ........................................................................... 141		-
dc.formatapplication/pdf-
dc.format.extent6851149 bytes-
dc.format.mediumapplication/pdf-
dc.language.isoen-
dc.publisher서울대학교 융합과학기술대학원-
dc.subjectTFTs-
dc.subjectZnO-
dc.subjectmetal oxide semiconductor-
dc.subjectlithium dopant.-
dc.subject.ddc620-
dc.titleMaterial Engineering of Zinc Oxide Semiconductor for Solution-processed Thin Film Transistors-
dc.title.alternative용액형 박막 트랜지스터를 위한 산화 아연 반도체의 소재 공정-
dc.typeThesis-
dc.contributor.AlternativeAuthor박시윤-
dc.description.degreeDoctor-
dc.citation.pagesXV, 143-
dc.contributor.affiliation융합과학기술대학원 융합과학부(나노융합전공)-
dc.date.awarded2015-08-
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