Development of oxide thin-film diodes and characterization of oxide thin-film transistors

Abstract

In this paper, development of oxide thin-film diodes and characterization of oxide thin-film transistors are investigated. Our study has meaning in that 1) oxide materials are promising compounds showing novel electronic performances, overcoming conventional amorphous silicon technologies in active matrix in thin-film electronics

2) these two units act as key roles for operating functions in functional active matrix in thin-film electronic systems

the thin-film transistor is for a switching unit in a matrix element, and the thin-film diode is for signal-rectifications (AC-to-DC converting and electrostatic discharging) to protect the active matrix. In oxide thin-film transistors, how oxide insulator as a gate dielectric layer affects the electrical properties of oxide semiconductor as a channel layer is discussed. For thin-film diodes, from recent observation showing electrical conductions at oxide insulator/oxide semiconductor interfaces, it is shown that the novel finding act as a key role to perform the function of rectifying electrical currents, thereby it is utilized as oxide thin-film diodes. These two important device units will be applied to realize novel thin-film electronic systems.