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Deposition behavior and dielectric properties of the Ti-based oxide films for memory devices : 메모리 소자에의 적용을 위한 TiO₂박막의 성장 거동 및 특성에 대한 연구

DC Field Value Language
dc.contributor.advisor황철성-
dc.contributor.author김성근-
dc.date.accessioned2009-11-18-
dc.date.available2009-11-18-
dc.date.copyright2007.-
dc.date.issued2007-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000042915eng
dc.identifier.urihttps://hdl.handle.net/10371/12645-
dc.description학위논문(박사) --서울대학교 대학원 :재료공학부,2007.eng
dc.format.extentxiv, 190 p.eng
dc.language.isoeneng
dc.publisher서울대학교 대학원eng
dc.subjectTiO2eng
dc.subjectAl-doped TiO2eng
dc.subjecthigh-keng
dc.subjectAtomic layer deposition (ALD)eng
dc.subjectO3eng
dc.subjectDRAMeng
dc.subjectcapacitoreng
dc.titleDeposition behavior and dielectric properties of the Ti-based oxide films for memory deviceseng
dc.title.alternative메모리 소자에의 적용을 위한 TiO₂박막의 성장 거동 및 특성에 대한 연구eng
dc.typeThesis-
dc.contributor.department재료공학부-
dc.description.degreeDoctoreng
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