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Study on interface states of Al₂O₃Si and work function tunability of gate metal stack in MOS capacitor
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 김형준 | - |
| dc.contributor.author | 전인상 | - |
| dc.date.accessioned | 2009-11-18T02:18:12Z | - |
| dc.date.available | 2009-11-18T02:18:12Z | - |
| dc.date.copyright | 2005. | - |
| dc.date.issued | 2005 | - |
| dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000050063 | eng |
| dc.identifier.uri | https://hdl.handle.net/10371/12724 | - |
| dc.description | Thesis(doctoral)--서울대학교 대학원 :재료공학부,2005. | eng |
| dc.format.extent | xvi, 161 p. | eng |
| dc.language.iso | en | - |
| dc.publisher | 서울대학교 대학원 | eng |
| dc.subject | Metal-oxide-semiconductor (MOS) | eng |
| dc.subject | Deep level transient spectroscopy (DLTS) | eng |
| dc.subject | Fixed Charge | eng |
| dc.subject | Slow | eng |
| dc.subject | Fast Interface state | eng |
| dc.subject | Minority Capture Process | eng |
| dc.subject | Capture Cross-section | eng |
| dc.subject | Metal Gate | eng |
| dc.subject | Work Function Tunability | eng |
| dc.subject | Stacked Bi-metal Layers | eng |
| dc.title | Study on interface states of Al₂O₃Si and work function tunability of gate metal stack in MOS capacitor | eng |
| dc.type | Thesis | - |
| dc.contributor.department | 재료공학부 | - |
| dc.description.degree | Doctor | eng |
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