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Nanoscale order, thermal conductivity of Ge2Sb2Te5 alloy and its application for PRAM device : Ge2Sb2Te5 화합물의 나노스케일 규칙도, 열전도도 및 이를 적용한 상변화 메모리소자에 대한 연구
DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | 김기범 | - |
dc.contributor.author | 권민호 | - |
dc.date.accessioned | 2009-11-18T03:48:24Z | - |
dc.date.available | 2009-11-18T03:48:24Z | - |
dc.date.copyright | 2009. | - |
dc.date.issued | 2009 | - |
dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000038119 | eng |
dc.identifier.uri | https://hdl.handle.net/10371/12930 | - |
dc.description | Thesis(doctors) --서울대학교 대학원 :재료공학부,2009.8. | eng |
dc.format.extent | xvi, 140 leaves | eng |
dc.language.iso | en | eng |
dc.publisher | 서울대학교 대학원 | eng |
dc.subject | 상변화 메모리 | eng |
dc.subject | Phase change memory | eng |
dc.subject | 중거리 규칙도 | eng |
dc.subject | PRAM | eng |
dc.subject | 열전도도 | eng |
dc.subject | PCRAM | eng |
dc.subject | 상호확산 | eng |
dc.subject | Ge2Sb2Te5 | eng |
dc.subject | 확산방지막 | eng |
dc.subject | Si | eng |
dc.subject | 열전효과 | eng |
dc.subject | Ti silicide | eng |
dc.subject | nanoscale order | eng |
dc.subject | thermal conductivity | eng |
dc.subject | interdiffusion | eng |
dc.subject | diffusion barrier | eng |
dc.subject | Thermoelectric effect | eng |
dc.subject | Peltier effect | eng |
dc.subject | FEM | eng |
dc.subject | TDTR | eng |
dc.title | Nanoscale order, thermal conductivity of Ge2Sb2Te5 alloy and its application for PRAM device | eng |
dc.title.alternative | Ge2Sb2Te5 화합물의 나노스케일 규칙도, 열전도도 및 이를 적용한 상변화 메모리소자에 대한 연구 | eng |
dc.type | Thesis | - |
dc.contributor.department | 재료공학부 | - |
dc.description.degree | Doctor | eng |
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