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Growth of high quality group IV materials via carbon containing layer : 탄소 함유막을 이용한 고품질 IV족 물질 성장 연구
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- Authors
- Advisor
- 윤의준
- Issue Date
- 2009
- Publisher
- 서울대학교 대학원
- Keywords
- 초고진공화학기상증착법 (UHV-CVD) ; ultrahigh vacuum chemical vapor deposition (UHV-CVD) ; 실리콘게르마늄C (SiGeC) ; SiGeC ; 실리콘게르마늄 (SiGe) ; SiGe ; 게르마늄 (Ge) ; Ge ; 격자이완 ; relaxation ; C 함유 막 ; C contained layer
- Description
- Thesis(doctors) --서울대학교 대학원 :재료공학부,2009.2.
- Language
- English
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000035982
https://hdl.handle.net/10371/13198
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