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Growth of high quality group IV materials via carbon containing layer : 탄소 함유막을 이용한 고품질 IV족 물질 성장 연구
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 윤의준 | - |
| dc.contributor.author | 김현우 | - |
| dc.date.accessioned | 2009-11-18T06:16:48Z | - |
| dc.date.available | 2009-11-18T06:16:48Z | - |
| dc.date.copyright | 2009. | - |
| dc.date.issued | 2009 | - |
| dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000035982 | eng |
| dc.identifier.uri | https://hdl.handle.net/10371/13198 | - |
| dc.description | Thesis(doctors) --서울대학교 대학원 :재료공학부,2009.2. | eng |
| dc.format.extent | xiii, 157 p. | eng |
| dc.language.iso | en | eng |
| dc.publisher | 서울대학교 대학원 | eng |
| dc.subject | 초고진공화학기상증착법 (UHV-CVD) | eng |
| dc.subject | ultrahigh vacuum chemical vapor deposition (UHV-CVD) | eng |
| dc.subject | 실리콘게르마늄C (SiGeC) | eng |
| dc.subject | SiGeC | eng |
| dc.subject | 실리콘게르마늄 (SiGe) | eng |
| dc.subject | SiGe | eng |
| dc.subject | 게르마늄 (Ge) | eng |
| dc.subject | Ge | eng |
| dc.subject | 격자이완 | eng |
| dc.subject | relaxation | eng |
| dc.subject | C 함유 막 | eng |
| dc.subject | C contained layer | eng |
| dc.title | Growth of high quality group IV materials via carbon containing layer | eng |
| dc.title.alternative | 탄소 함유막을 이용한 고품질 IV족 물질 성장 연구 | eng |
| dc.type | Thesis | - |
| dc.contributor.department | 재료공학부 | - |
| dc.description.degree | Doctor | eng |
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