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A Study of Metal Influence on Widening Operating Voltage of Oxide Thin Film Diodes : 산화물 박막 다이오드의 작동 전압 확대에 대한 금속층의 영향에 관한 연구
DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | 김연상 | - |
dc.contributor.author | Park Jun-Woo | - |
dc.date.accessioned | 2017-07-19T10:58:24Z | - |
dc.date.available | 2019-04-18 | - |
dc.date.issued | 2017-02 | - |
dc.identifier.other | 000000142344 | - |
dc.identifier.uri | https://hdl.handle.net/10371/133236 | - |
dc.description | 학위논문 (석사)-- 서울대학교 대학원 : 융합과학부, 2017. 2. 김연상. | - |
dc.description.abstract | Recently, a new type of oxide thin-film diode based on hetero-interface between oxide semiconductor and insulator has been reported. The metal / insulator / oxide semiconductor / metal structured MISM diode exhibits excellent rectification ratio and stable current behavior. In particular, the on-current level can be controlled by adjusting the dielectric constant and thickness of the insulators. Controlling of turn-on voltage and expanding operating window are critical features for making more diverse MISM diodes. However, these have not yet been studied. Thus, we demonstrate a simple process for the first time that can control the turn-on voltage of the MISM diode. We propose engineering the interface between the top metal and oxide semiconductor layers. The turn-on voltage of MISM diodes has been found to shift significantly depending on the oxide semiconductor and top electrode material combination. Using aluminum for the top metal of the diode, the turn-on voltage is 0 V, which is significantly different from 14.4 V when using silver. Moreover, when titanium was deposited first before silver, the turn-on voltage shows 0 V. Therefore, we suggest a new fundamental technique to expand the operating window of the MISM diode. | - |
dc.description.tableofcontents | 1. Introduction 1
1.1 Current Trend in Oxide Thin Film Diodes 1 1.2 New Oxide Hetero-junction Thin Film Diode 3 1.3 Characteristics and Mechanism of MISM Diodes 5 1.4 Expansion of MISM Diodes Operating Window 8 2. Experimental Process 10 2.1 Fabrication and Measurement of MISM Diodes 10 2.2 Fabrication of TLM Device 13 2.3 Contact Resistance Measurement 14 3. Results and Discussion 16 3.1 Expanding Operating Window of MISM Diode 16 3.2 Comparison of Rectification Characteristics with Other Oxide Semiconductors 20 3.3 Contact Resistance of Interface between Metal and Oxide Semiconductor 23 3.4 TEM Analysis of Interface between Metal and Oxide Semiconductor 29 3.5 Operation Voltage Control Using Titanium Buffer Layer 32 4. Conclusion 35 References 37 요약 43 | - |
dc.format | application/pdf | - |
dc.format.extent | 1341892 bytes | - |
dc.format.medium | application/pdf | - |
dc.language.iso | en | - |
dc.publisher | 서울대학교 대학원 | - |
dc.subject | oxide thin film diode | - |
dc.subject | hetero-interface | - |
dc.subject | metal–oxide semiconductor junction | - |
dc.subject | contact resistance | - |
dc.subject | operating voltage | - |
dc.subject.ddc | 620 | - |
dc.title | A Study of Metal Influence on Widening Operating Voltage of Oxide Thin Film Diodes | - |
dc.title.alternative | 산화물 박막 다이오드의 작동 전압 확대에 대한 금속층의 영향에 관한 연구 | - |
dc.type | Thesis | - |
dc.contributor.AlternativeAuthor | 박준우 | - |
dc.description.degree | Master | - |
dc.citation.pages | 44 | - |
dc.contributor.affiliation | 융합과학기술대학원 융합과학부 | - |
dc.date.awarded | 2017-02 | - |
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