Non-volatile Memory Effect of Redox Proteins

Abstract

In this paper, we demonstrated non-volatile memory effect of redox proteins such as myoglobin, hemoglobin, and cytochrome c. Also, we introduced the fabrication of non-volatile organic field-effect transistor (OFET) memory utilizing myoglobin as a charge trapping element. Redox proteins are composed of a heme structure containing an iron atom, which have an effect on charge trapping and releasing via reversible redox reactions. Myoglobin charge trapping layer in OFET-based memory showed a considerable memory window, which depended proportionally on the concentrations of myoglobin solutions. We obtained the maximum memory window of ~20 V as well as good endurance properties in ambient conditions. Also, other redox proteins could be successfully applied to the memory device which showed a reliable memory window.