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Study on atomic layer deposited high-k HfO₂ film and reliability problem based on chlorine carbon residue

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dc.contributor.advisor황철성-
dc.contributor.author조문주-
dc.date.accessioned2009-11-18T22:24:42Z-
dc.date.available2009-11-18T22:24:42Z-
dc.date.copyright2007.-
dc.date.issued2007-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000042941eng
dc.identifier.urihttps://hdl.handle.net/10371/13527-
dc.description학위논문(박사) --서울대학교 대학원 :재료공학부,2007.eng
dc.format.extentxvi, 150 p.eng
dc.language.isoeneng
dc.publisher서울대학교 대학원eng
dc.subjectHfO₂eng
dc.subjectALCVD (ALD)eng
dc.subjecthigh-keng
dc.subjectChlorineeng
dc.subjectcarboneng
dc.subjectTDDBeng
dc.subjectcharge pumpingeng
dc.titleStudy on atomic layer deposited high-k HfO₂ film and reliability problem based on chlorine carbon residueeng
dc.typeThesis-
dc.contributor.department재료공학부-
dc.description.degreeDoctoreng
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