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(A) study on the strain variation by boron doping in SiGe epitaxial growth : SiGe 단결정막 성장 시 붕소 도핑에 의한 응력 변화에 관한 연구
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 윤의준 | - |
| dc.contributor.author | 송석찬 | - |
| dc.date.accessioned | 2009-11-18T22:29:00Z | - |
| dc.date.available | 2009-11-18T22:29:00Z | - |
| dc.date.copyright | 2008. | - |
| dc.date.issued | 2008 | - |
| dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000041514 | eng |
| dc.identifier.uri | https://hdl.handle.net/10371/13536 | - |
| dc.description | Thesis(doctors) --서울대학교 대학원 :재료공학부,2008.8. | eng |
| dc.format.extent | xi, 121 leaves. | eng |
| dc.language.iso | en | eng |
| dc.publisher | 서울대학교 대학원 | eng |
| dc.subject | 초고진공화학기상증착법 | eng |
| dc.subject | SiGe | eng |
| dc.subject | 격자상수 | eng |
| dc.subject | boron doping | eng |
| dc.subject | boron 도핑 | eng |
| dc.subject | lattice contraction coefficient | eng |
| dc.subject | SiGe | eng |
| dc.subject | UHV-CVD | eng |
| dc.subject | Si | eng |
| dc.subject | HRXRD | eng |
| dc.subject | 격자수축계수 | eng |
| dc.subject | VASP | eng |
| dc.subject | HRXRD | eng |
| dc.subject | VASP | eng |
| dc.subject | 응력변화 | eng |
| dc.title | (A) study on the strain variation by boron doping in SiGe epitaxial growth | eng |
| dc.title.alternative | SiGe 단결정막 성장 시 붕소 도핑에 의한 응력 변화에 관한 연구 | eng |
| dc.type | Thesis | - |
| dc.contributor.department | 재료공학부 | - |
| dc.description.degree | Doctor | eng |
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