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Growth of high quality InAs quantum dots with periodic AsH₃ interruption (PAI) : AsH₃의 주기적인 공급차단을 이용한 고품질의 InAs 양자점 성장

DC Field Value Language
dc.contributor.advisor윤의준-
dc.contributor.author이영수-
dc.date.accessioned2009-11-18T22:32:04Z-
dc.date.available2009-11-18T22:32:04Z-
dc.date.copyright2007.-
dc.date.issued2007-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000042940eng
dc.identifier.urihttps://hdl.handle.net/10371/13543-
dc.description학위논문(박사) --서울대학교 대학원 :재료공학부,2007.eng
dc.format.extentxiii, 145 p.eng
dc.language.isoeneng
dc.publisher서울대학교 대학원eng
dc.subject유기금속 화학 증착법eng
dc.subjectMOCVDeng
dc.subject자발형성 양자점eng
dc.subjectSelf assembled quantum doteng
dc.subjectInAseng
dc.subjectInAseng
dc.subjectInGaAseng
dc.subjectInGaAseng
dc.subjectGaAseng
dc.subjectGaAseng
dc.subjectPLeng
dc.subjectPLeng
dc.subjectELeng
dc.subjectELeng
dc.subject원자현미경eng
dc.subject원자현미경eng
dc.subjectXRDeng
dc.subjectXRDeng
dc.titleGrowth of high quality InAs quantum dots with periodic AsH₃ interruption (PAI)eng
dc.title.alternativeAsH₃의 주기적인 공급차단을 이용한 고품질의 InAs 양자점 성장eng
dc.typeThesis-
dc.contributor.department재료공학부-
dc.description.degreeDoctoreng
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