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New materials in advanced gate stacks for next generation complementary metal oxide semiconductor field effect transistors(CMOSFETs) technology
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 황철성 | - |
| dc.contributor.author | 박태주 | - |
| dc.date.accessioned | 2009-11-18T22:41:42Z | - |
| dc.date.available | 2009-11-18T22:41:42Z | - |
| dc.date.copyright | 2008. | - |
| dc.date.issued | 2008 | - |
| dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000039480 | eng |
| dc.identifier.uri | https://hdl.handle.net/10371/13567 | - |
| dc.description | Thesis(doctors)--서울대학교 대학원 :재료공학부,2008.2. | eng |
| dc.format.extent | xviii, 182 p. | eng |
| dc.language.iso | en | eng |
| dc.publisher | 서울대학교 대학원 | eng |
| dc.subject | ALD | eng |
| dc.subject | ALD | eng |
| dc.subject | High-k | eng |
| dc.subject | High-k | eng |
| dc.subject | Metal gate | eng |
| dc.subject | Metal gate | eng |
| dc.subject | High mobility channel | eng |
| dc.subject | High mobility channel | eng |
| dc.subject | MOSFETs | eng |
| dc.subject | MOSFETs | eng |
| dc.title | New materials in advanced gate stacks for next generation complementary metal oxide semiconductor field effect transistors(CMOSFETs) technology | eng |
| dc.type | Thesis | - |
| dc.contributor.department | 재료공학부 | - |
| dc.description.degree | Doctor | eng |
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