S-Space College of Engineering/Engineering Practice School (공과대학/대학원) Dept. of Electrical and Computer Engineering (전기·정보공학부) Others_전기·정보공학부
Preparation of Light-Emitting Devices with Poly(p-Phenylenevinylene): Effects of Thermal Elimination Conditions and Polymer Layer Thickness on Device Performance
- Seoul, Chang; Kang, Jae Ick; Mah, Souk Il; Lee, Changhee
- Issue Date
- Synth. Met. 99 (1999) 35
- Polymer; Light emitting diode; Poly(p-phenylene vinylene); Thermal elimination conditions; External quantum efficiency; Brightness; Degree of conversion; Precursor film; Electroluminescence
- The optimum thermal elimination conditions for poly(p-phenylene vinylene) light-emitting diodes were sought. The precursor films should be heated to 230°C and kept at this temperature for 5 min under a N2 flow of 50 ml/min. By the heat treatment the degree of conversion to PPV was about 70%. A method determining the degree of conversion to PPV was proposed with IR measurement. About 8% of the THT resides in the fully converted PPV. A high external quantum efficiency of 0.0078% was achieved for the ITO/partially converted PPV/Al devices. The optimum thickness for the partially converted PPV layer as a electroluminescent was about 150 nm.
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