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Transient Electroluminescence in the Light-Emitting Diodes of Poly(p-phenylene) Thin Film

DC Field Value Language
dc.contributor.authorKang, G. W.-
dc.contributor.authorLee, Changhee-
dc.contributor.authorSong, W. J.-
dc.contributor.authorSeoul, C.-
dc.date.accessioned2009-11-23T05:21:58Z-
dc.date.available2009-11-23T05:21:58Z-
dc.date.issued2000-06-
dc.identifier.citationJ. Korean Phys. Soc. 36, 351en
dc.identifier.issn0374-4884 (Print)-
dc.identifier.issn1976-8524 (Online)-
dc.identifier.urihttps://hdl.handle.net/10371/13761-
dc.description.abstractWe have studied the temporal response of the electroluminescence (EL) emission in the lightemitting
diodes fabricated with a vacuum-deposited poly (p-phenylene) (PPP) thin lm as an
emissive layer sandwiched between indium-tin-oxide (ITO) and Al electrodes. Upon application of
a rectangular driving voltage with a forward bias, we observed a time delay between the onset of the
bias voltage pulse and the EL emission. The EL time delay results from the charge carrier transport
towards the recombination zone. Since the hole mobility is much larger than the electron mobility
in PPP, the EL delay time is the transit time for holes in PPP thin films. The hole mobility is
estimated to be 1 10􀀀5 cm2/Vs in vacuum-deposited PPP films.
en
dc.language.isoen-
dc.publisher한국물리학회 = The Korean Physical Societyen
dc.titleTransient Electroluminescence in the Light-Emitting Diodes of Poly(p-phenylene) Thin Filmen
dc.typeArticleen
dc.contributor.AlternativeAuthor이창희-
dc.identifier.doi10.3938/jkps.36.351-
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