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Photoconductivity in Insulating YBa2Cu3O6+x: From Mott-Hubbard Insulator to Fermi Glass via Oxygen Doping
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yu, G. | - |
dc.contributor.author | Lee, Changhee | - |
dc.contributor.author | Mihailovic, D. | - |
dc.contributor.author | Heeger, A. J. | - |
dc.contributor.author | Fincher, C. | - |
dc.contributor.author | Herron, N. | - |
dc.contributor.author | McCarron, E. M. | - |
dc.date.accessioned | 2009-11-23T05:25:00Z | - |
dc.date.available | 2009-11-23T05:25:00Z | - |
dc.date.issued | 1993-09-01 | - |
dc.identifier.citation | Phys. Rev. B 48, 7545 | en |
dc.identifier.issn | 1098-0121 | - |
dc.identifier.uri | https://hdl.handle.net/10371/13765 | - |
dc.description.abstract | Photoconductivity, σph(ω), and optical conductivity, σ(ω), are compared for insulating YBa2Cu3O6+x (x<0.4) in the photon energy range from 0.6 to 3.3 eV. With x≊0, there is an energy gap with weak spectral features at 1.5 and 2.1 eV, in addition to the well-known 1.75 and 2.7 eV bands. The coincidence between σph(ω) and σ(ω) at the band edge implies the photogeneration of separated charge carriers; no significant exciton binding energy is observed. The spectral gap in stoichiometric YBa2Cu3O6 is consistent with the electronic structure of a Mott-Hubbard insulator with a well-defined energy gap between the filled O 2p band and the empty Cu 3d upper Hubbard band. The 1.5-eV feature determines the lowest-energy interband transition. Oxygen doping into the O(1) sites results in a major change in electronic structure. For x≊0.3, the absorption observed throughout the infrared has no counterpart in σph(ω); the photoconductivity turns on near 2 eV. In addition, thermally activated behavior is observed for the 1.75-eV band in σph(ω). We conclude that upon doping, the states involved in transitions below 2 eV become localized. The data imply that the random distribution of oxygen ions at O(1) sites causes a change of electronic structure from a Mott-Hubbard insulator with a well-defined interband charge-transfer energy gap (at x=0) to a Fermi glass (at x≊0.3). | en |
dc.language.iso | en | en |
dc.publisher | American Physical Society | en |
dc.title | Photoconductivity in Insulating YBa2Cu3O6+x: From Mott-Hubbard Insulator to Fermi Glass via Oxygen Doping | en |
dc.type | Article | en |
dc.contributor.AlternativeAuthor | 이창희 | - |
dc.identifier.doi | 10.1103/PhysRevB.48.7545 | - |
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