Publications
Detailed Information
Low driving voltage and long lifetime organic light-emitting diodes with molybdenum oxide (MoO3) doped hole transport layer
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yun, Jinyoung | - |
dc.contributor.author | Yang, Jungjin | - |
dc.contributor.author | Hong, Yongtaek | - |
dc.contributor.author | Lee, Changhee | - |
dc.contributor.author | Song, Won Jun | - |
dc.contributor.author | Sung, Yeun Joo | - |
dc.date.accessioned | 2009-11-23T05:40:03Z | - |
dc.date.available | 2009-11-23T05:40:03Z | - |
dc.date.issued | 2008 | - |
dc.identifier.citation | J. Korean Phys. Soc. 53, 1660 | en |
dc.identifier.issn | 0374-4884 (Print) | - |
dc.identifier.issn | 1976-8524 (Online) | - |
dc.identifier.uri | https://hdl.handle.net/10371/13786 | - |
dc.description.abstract | We report low-operating-voltage, long-lifetime organic light-emitting diodes (OLEDs) with a molybdenum-oxide (MoO$_3$)-doped N,N'-di(1-naphthyl)-N,N'-diphenylbenzidine ($\alpha$-NPD) layer between the indium tin oxide and the $\alpha$-NPD. The current density-voltage-luminance characteristics and the lifetime were studied for various MoO$_3$ doping concentrations and thicknesses. The devices with $\alpha$-NPD layers of various MoO$_3$ doping concentrations and thicknesses exhibited lower driving voltage and higher power efficiency compared with the undoped devices. Furthermore, the device with MoO$_3$-doped hole transport layer showed a longer lifetime and a much reduced operational voltage variation. The optical absorption spectra of the MoO$_3$-doped $\alpha$-NPD layer showed two new peaks, around 500 and 1400 nm, indicating that charge transfer complexes had formed between MoO$_3$ and $\alpha$-NPD. The p-type doping of $\alpha$-NPD by MoO$_3$ improved hole injection. In addition, AFM images show that the morphology of the MoO$_3$-doped $\alpha$-NPD layer improved with increasing MoO$_3$ doping concentration. Therefore, the improved device performance can be attributed to the higher hole-injection efficiency and the improved morphology of the MoO$_3$-doped $\alpha$-NPD layer. | en |
dc.description.sponsorship | This work was supported by \Samsung SDI - Seoul
National University Display Innovation Program" and \New Growth Engine Display Center", Ministry of Com- merce, Industry and Energy (MOCIE), Korea. | en |
dc.language.iso | en | - |
dc.publisher | 한국물리학회 = The Korean Physical Society | en |
dc.subject | OLEDs | en |
dc.subject | MoO3 | en |
dc.subject | Doping | en |
dc.subject | p-doped hole transport layer | en |
dc.title | Low driving voltage and long lifetime organic light-emitting diodes with molybdenum oxide (MoO3) doped hole transport layer | en |
dc.type | Article | en |
dc.contributor.AlternativeAuthor | 윤진영 | - |
dc.contributor.AlternativeAuthor | 양정진 | - |
dc.contributor.AlternativeAuthor | 홍용택 | - |
dc.contributor.AlternativeAuthor | 이창희 | - |
dc.contributor.AlternativeAuthor | 송원준 | - |
dc.contributor.AlternativeAuthor | 성연주 | - |
dc.identifier.doi | 10.3938/jkps.53.1660 | - |
- Appears in Collections:
Item View & Download Count
Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.