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Electroluminescence characteristics of n-type matrix materials doped with iridium-based green and red phosphorescent emitters
Cited 31 time in
Web of Science
Cited 30 time in Scopus
- Authors
- Issue Date
- 2008
- Publisher
- American Institute of Physics
- Citation
- J. Appl. Phys. 103, 054510
- Abstract
- The electroluminescence characteristics of various n-type matrix materials with various orders of
electron mobility doped with the phosphorescent green emitter fac-tris 2-phenylpyridine
iridium III Ir ppy 3 and the phosphorescent red emitter bis 2- 2 -benzo 4,5-a
thienyl pyridinato-N,C3 iridium acetyl-acetonate btp2Ir acac were evaluated and compared to
those of the p-type 4,4 -N,N -dicarbazole-biphenyl CBP reference matrix. For Ir ppy 3, the
device with the n-type matrix 1,3,5-tris N-phenylbenzimidazol-2-yl benzene was found to have the
highest efficiency and operational lifetime, whereas for btp2Ir acac the device with the p-type
matrix CBP was found to have the highest efficiency. Our study of hole- and electron-dominant
devices and analyses of electroluminescence spectra show that the main recombination zone
position and the electron-hole balance change as the matrix material changes, resulting in changes
in the characteristics of the organic light emitting diodes.
- ISSN
- 0021-8979
- Language
- English
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