All Solution processed N-type organic transistor using a spinning metal process

Abstract

An all-solution-processed n-type transistor of soluble fullerene derivatives, based on a photosensitive organic silver precursor route to deposit source and drain metal electrodes, is reported (see Figure). The field-effect mobility of such devices is strongly dependent on the morphology of the spin-cast semiconducting thin film. The devices fabricated in this manner show a higher electron mobility than devices fabricated by vacuum-shadow deposition.