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ALD(Atomic Layer Deposition) 증착법을 이용한 Bi2(Ti2-xSix)O7-y 유전박막의 증착 거동 및 물성 평가에 관한 연구 : Growth mechanism and characteristics of Bi2(Ti2-xSix)O7-y deposited by atomic layer deposition
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- Authors
- Advisor
- 황철성
- Issue Date
- 2005
- Publisher
- 서울대학교 대학원
- Keywords
- Bi2(Ti2-xSix)O7-y (BTSO) ; Bi2(Ti2-xSix)O7-y (BTSO) ; Bi-Ti-O (BTO) ; Bi-Ti-O (BTO) ; 커패시터 ; capacitor ; ALD ; ALD ; 고유전재료 ; dielectric constant ; 유전율 ; leakage current density ; 전극 ; composition ratio ; 조성비 ; 누설 전류 특성 ; DRAM
- Description
- 학위논문(석사)--서울대학교 대학원 :재료공학부,2005.
- Language
- Korean
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000051038
https://hdl.handle.net/10371/14282
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