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Dual Functions of V/SiOx/AlOy/p++Si Device as Selector and Memory
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Sungjun | - |
dc.contributor.author | Lin, Chih-Yang | - |
dc.contributor.author | Kim, Min-Hwi | - |
dc.contributor.author | Kim, Tae-Hyeon | - |
dc.contributor.author | Kim, Hyungjin | - |
dc.contributor.author | Chen, Ying-Chen | - |
dc.contributor.author | Chang, Yao-Feng | - |
dc.contributor.author | Park, Byung-Gook | - |
dc.date.accessioned | 2018-11-14T06:56:09Z | - |
dc.date.available | 2018-11-14T15:57:38Z | - |
dc.date.issued | 2018-08-23 | - |
dc.identifier.citation | Nanoscale Research Letters, 13(1):252 | ko_KR |
dc.identifier.issn | 1556-276X | - |
dc.identifier.uri | https://hdl.handle.net/10371/143542 | - |
dc.description.abstract | This letter presents dual functions including selector and memory switching in a V/SiOx/AlOy/p++Si resistive memory device by simply controlling compliance current limit (CCL). Unidirectional threshold switching is observed after a positive forming with low CCL of 1μA. The shifts to the V-electrode side of the oxygen form the VOx layer, where the threshold switching can be explained by the metal-insulation-transition phenomenon. For higher CCL (30μA) applied to the device, a bipolar memory switching is obtained, which is attributed to formation and rupture of the conducting filament in SiOy layer. 1.5-nm-thick AlOy layer with high thermal conductivity plays an important role in lowering the off-current for memory and threshold switching. Through the temperature dependence, high-energy barrier (0.463eV) in the LRS is confirmed, which can cause nonlinearity in a low-resistance state. The smaller the CCL, the higher the nonlinearity, which provides a larger array size in the cross-point array. The coexistence of memory and threshold switching in accordance with the CCL provides the flexibility to control the device for its intended use. | ko_KR |
dc.description.sponsorship | This work was supported by a grant from the National Research Foundation of Korea (NRF), funded by the Korean government (MSIP) (2018R1A2A1A05023517). | ko_KR |
dc.language.iso | en | ko_KR |
dc.publisher | Springer Open | ko_KR |
dc.subject | Resistive switching | ko_KR |
dc.subject | Selector | ko_KR |
dc.subject | Memory | ko_KR |
dc.subject | Nonlinearity | ko_KR |
dc.subject | Silicon oxide | ko_KR |
dc.subject | Vanadium | ko_KR |
dc.title | Dual Functions of V/SiOx/AlOy/p++Si Device as Selector and Memory | ko_KR |
dc.type | Article | ko_KR |
dc.contributor.AlternativeAuthor | 김성준 | - |
dc.contributor.AlternativeAuthor | 김민희 | - |
dc.contributor.AlternativeAuthor | 김태현 | - |
dc.contributor.AlternativeAuthor | 박병국 | - |
dc.identifier.doi | 10.1186/s11671-018-2660-9 | - |
dc.language.rfc3066 | en | - |
dc.rights.holder | The Author(s). | - |
dc.date.updated | 2018-08-26T03:22:41Z | - |
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